RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction
نویسندگان
چکیده
In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.
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تاریخ انتشار 2005